February 2008
Kawasaki, Japan, Japan, — Fujitsu Laboratories, Ltd. announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology.
Targeting millimeter-wave applications, Fujitsu Labs developed a standard CMOS modeling technology and design techniques to minimize high-frequency signal loss, thereby enabling the development of the world's first CMOS-based PA that operates at 77GHz.
The technology realizes CMOS radio frequency (CMOS RF) front-end circuitry that includes a PA, thereby enabling integration with baseband circuitry on a single chip, for use in millimeter-wave automotive radar systems.
The millimeter wave is ideal for measuring with high resolution and accuracy the distance between two points, as well as for high-capacity data transmission.
As such, the millimeter wave is starting to be applied to automotive radar systems and to wireless transmission systems. Typically, compound semiconductors have been used in the RF front-end circuits of these systems in order to realize high gain and output of high-frequency signals.
On the other hand, for CMOS technology, which features high levels of integration and high-functionality, progress has been made in regard to operational speeds - attributable to ongoing miniaturization - and it is now possible to apply millimeter wave circuits to achieve operation that was previously achieved through compound semiconductors.
Practical application of standard CMOS technology in millimeter-wave circuitry has been problematic due to the occurrence of significant signal loss. In order to boost the gain in an amplifier, a number of factors that are not evident on a circuit diagram, such as parasitic capacitance, need to be accurately reflected.
In addition, signal loss in a matching circuit needs to be suppressed to enable maximum amplification performance.
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